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Product Detailed Parameters
- Description：IGBT MODULE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.45V @ 3.6kA, 15V
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-IHM190-2-1
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：-
- Power - Max：350 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：3.3 nF @ 25 V
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Overview
The FZ3600R17KE3 is a single-switch IGBT module from Infineon Technologies, utilizing IGBT3-E3 technology. It features a nominal collector current of 3600 A and a maximum voltage rating of 1700 V. The typical saturation voltage (VCE(sat)) at Tj=25°C is 1.95 V, while the typical forward voltage (VF) is 1.8 V. The component is housed in an IHM B package with dimensions of 140 mm width and 190 mm length. Designed for industrial quality standards, this silicon-based module serves as a high-power switching element.
Feature Summary
- Single switch topology configuration
- IGBT3-E3 technology implementation
- IHM B packaging format
Applications
- Industrial power conversion systems
- High-current motor drive applications
- Medium voltage traction inverters
Procurement Notes
Verify the specific ordering suffix to confirm exact manufacturing lot details and compliance status. Confirm availability status as the part may be subject to lifecycle changes. Ensure the procurement channel provides valid traceability documentation. Cross-reference the manufacturer's official database for any recent updates regarding product qualification or recommended design-in guidelines before finalizing orders.
Selection Notes
Select this module for applications requiring high continuous current handling capabilities within a 1700 V blocking voltage range. Evaluate thermal management requirements based on the specified saturation voltage and package thermal characteristics. Ensure the gate driver interface matches the IGBT3-E3 technology specifications. Verify that the mechanical mounting constraints align with the IHM B package dimensions and screw-mounting requirements.
Part Context
This component belongs to Infineon's industrial IGBT module portfolio, specifically designed for high-power density applications. It represents the IGBT3 generation technology, offering optimized switching performance compared to previous iterations. The module is intended for use in demanding industrial environments where reliability and high current capacity are critical operational parameters.
Replacement Considerations
The FZ3600R17KE3_B2 is a documented variant of this part number. Verify electrical compatibility and pinout alignment when considering substitution. Check for any differences in thermal resistance or gate charge characteristics between variants.
