FZ400R12KE3B1HOSA1

$100.18

Description：IGBT MOD 1200V 650A 2250W
Series：-

SKU:769fb5fe7048 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 650A 2250W
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 400A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：650 A
Power - Max：2250 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：28 nF @ 25 V

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FZ400R12KE3B1HOSA1

Overview

The FZ400R12KE3B1HOSA1 is a single IGBT module with an integrated anti-parallel diode, manufactured by Infineon Technologies. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 650 A at 25°C. The device operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a maximum total power dissipation of 2250 W, a gate-emitter peak voltage of ±20 V, and a typical collector-emitter saturation voltage of 1.70 V at 25°C. The module utilizes a copper baseplate and provides an isolation test voltage of 2.5 kV RMS.

Feature Summary

Single switch configuration with integrated fast recovery diode
Trenchstop technology for optimized switching performance
Copper baseplate construction for efficient thermal management

Applications

Industrial motor drives
Inverter systems
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the exact ordering code against official Infineon documentation before purchase. Confirm that the suffix B1 corresponds to the specific revision and packaging details required for your assembly process. Ensure compliance with RoHS standards as indicated in the technical data sheet.

Selection Notes

Select this component based on its 1200 V blocking capability and high current handling capacity. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Consider the internal gate resistor and switching energy losses when designing the gate drive circuitry.

Part Context

This module belongs to the Trenchstop IGBT3 series from Infineon Technologies. It is designed for high-power applications requiring robust switching characteristics. The product integrates advanced silicon technology within a standardized mechanical package suitable for industrial mounting.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the voltage, current, and thermal specifications. Verify pin compatibility and mounting dimensions before implementation.