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The FZ400R12KS4PHOSA1 is a single-switch IGBT module from Infineon's 62mm C-Series, utilizing fast IGBT2 technology and pre-applied thermal interface material. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 400 A at 35°C case temperature with a maximum junction temperature of 150°C. The repetitive peak collector current reaches 800 A for 1 ms pulses. At 25°C, the collector-emitter saturation voltage is typically 3.20 V, while the diode forward voltage is typically 2.00 V. Thermal resistance from junction to heatsink is 0.0617 K/W per IGBT and 0.0915 K/W per diode.
Verify the specific ordering suffix against official documentation to confirm the inclusion of pre-applied TIM and exact packaging configuration. Ensure compliance with RoHS standards and check for UL approval status relevant to the target market. Confirm that the component meets industrial quality grades before finalizing procurement orders.
Select this module for designs requiring high robustness and low switching losses in resonant or high-frequency topologies. Verify that the system can accommodate the 150°C maximum junction temperature and the specific gate drive requirements of ±15 V. Ensure the cooling solution matches the thermal resistance values provided for the pre-applied TIM condition.
This component belongs to the Infineon 62mm C-Series IGBT modules, designed specifically for high-frequency switching applications. It integrates fast IGBT2 chips with an integrated anti-parallel diode. The series is characterized by its compact mechanical footprint and high power density, suitable for demanding industrial and medical power conversion environments.
Direct replacements must match the 62mm package dimensions and electrical ratings. Consider variants within the same C-Series family, such as the FZ400R12KS4, noting differences in pre-applied TIM availability. Verify compatibility with existing PCB layouts and mounting hardware when substituting.