FZ400R65KE3NOSA1

Overview

The FZ400R65KE3NOSA1 is a highly insulated single-switch IGBT module utilizing Trench/Fieldstop IGBT3 technology. It features a collector-emitter voltage (VCES) of 6500 V and a nominal continuous DC collector current (ICDC) of 400 A at TC = 80 °C, with a repetitive peak current (ICRM) of 800 A. The module incorporates an emitter-controlled diode with a forward current rating of 400 A. Key electrical parameters include a typical saturation voltage (VCEsat) of 3.4 V at 25 °C and a thermal resistance (RthJC) of 15.0 K/kW for the IGBT. The package utilizes an AlSiC base plate to enhance thermal cycling capability.

Feature Summary

• Highly insulated design with 10.4 kV AC isolation and extended creepage distances
• Trench/Fieldstop IGBT3 technology combined with emitter-controlled diodes
• AlSiC base plate construction for improved thermal cycling robustness
• Qualified for industrial applications per IEC 60747, 60749, and 60068 standards

Applications

• Medium-voltage converters
• Traction drives

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the procurement channel provides valid traceability and authenticity certificates. Confirm compliance with RoHS directives and check for any specific environmental or export control classifications relevant to the jurisdiction of import.

Selection Notes

Select this component for high-voltage applications requiring robust insulation and high thermal cycling endurance. Evaluate the junction-to-case thermal resistance and required heatsinking based on the specified power dissipation limits. Ensure gate drive circuits accommodate the internal gate resistor and peak voltage ratings to maintain safe operating area boundaries during switching transitions.

Part Context

This part belongs to the Infineon IGBT3 - E3 series, designed for industrial and traction environments. It represents a high-voltage silicon solution optimized for medium-power density applications where reliability under harsh electrical and thermal conditions is critical. The module integrates both N-channel IGBT and anti-parallel diode functions in a single screw-mount package.

Replacement Considerations

Direct replacements must match the 6500 V rating, 400 A current capacity, and identical mounting dimensions. Verify compatibility of thermal interface materials and gate drive requirements. Cross-reference with other Infineon modules in the same mechanical footprint and insulation class.