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The FZ600R17KE3HOSA1 is a single-switch IGBT module from Infineon's Trenchstop IGBT3 series, designed for high-power applications. It features a 1700 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 600 A at TC=80°C, rising to 840 A at TC=25°C. The module integrates an Emitter Controlled 3 diode with a repetitive peak reverse voltage of 1700 V and a continuous forward current of 600 A. Key electrical parameters include a typical collector-emitter saturation voltage (VCEsat) of 2.0 V at 25°C and a forward voltage (VF) of 1.8 V for the diode. The unit weighs 340 g and utilizes a standard 62 mm C-series housing.
Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance with RoHS directives and material declarations. Ensure that the procurement channel provides traceability to the original manufacturer, Infineon Technologies, to guarantee component authenticity and adherence to industrial quality standards.
Select this module for applications requiring high robustness and low conduction losses in the 1700 V class. Designers must account for the thermal resistance values provided in the datasheet when sizing heatsinks. Verify gate resistor requirements to manage switching speeds and minimize electromagnetic interference while staying within the maximum rated limits.
This component belongs to the 62mm C-Series module family from Infineon. It represents the third generation of Trenchstop technology, offering improved performance over previous iterations. The part is specifically engineered for industrial power electronics where reliability under high thermal and electrical stress is critical.
Publicly confirmed substitute part numbers are not available in the verified source material. Cross-referencing requires detailed electrical and mechanical comparison with alternative 1700 V, 600 A single-switch modules.