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Product Detailed Parameters
- Description：IHV IHM T XHP 3 3-6 5K
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 750A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-50°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：A-IHV190-6
- Voltage - Collector Emitter Breakdown (Max)：6500 V
- Current - Collector (Ic) (Max)：750 A
- Power - Max：3000000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：205 nF @ 25 V
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Overview
The FZ750R65KE3C1NOSA1 is a highly insulated IGBT module utilizing Trench/Fieldstop technology with an integrated emitter-controlled diode. It features a collector-emitter voltage of 6500 V and a nominal continuous DC collector current of 750 A at 80 °C case temperature, with a repetitive peak current capability of 1500 A. The device incorporates an AlSiC base plate for enhanced thermal cycling performance and provides high creepage and clearance distances. Electrical characteristics include a typical saturation voltage of 3.40 V at 25 °C and a maximum power dissipation of 3 MW.
Feature Summary
- Highly insulated package designed for demanding electrical isolation requirements
- Robust mechanical construction featuring an AlSiC base plate for superior thermal cycling endurance
- Integrated emitter-controlled diode providing low forward voltage characteristics
Applications
- Medium-voltage converters
- Traction drives
Procurement Notes
Verify the specific ordering suffix C1 against official documentation to confirm exact packaging or variant specifications. Ensure compliance with export control regulations if applicable. Confirm RoHS status through the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high voltage blocking capabilities up to 6500 V. Evaluate the thermal resistance values and mounting torque specifications to ensure proper heat sinking. Verify that the gate drive circuitry supports the required voltage levels and switching speeds for the intended operational frequency.
Part Context
This module belongs to the Infineon IGBT3 family, specifically designed for high-power industrial applications. It represents a mature silicon technology optimized for reliability in medium-voltage environments. The product line emphasizes robust insulation and mechanical stability for heavy-duty usage scenarios.
Replacement Considerations
Consult official substitution lists for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal interface dimensions before replacing existing units in established designs.
