ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1300 A
- Power - Max：5700 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：56 nF @ 25 V
Download product information
Overview
The FZ800R12KL4CNOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the C series. It features a dual configuration with two independent switches housed in an AG-PRIME2 package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 1250 A. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.6 V at 15 V gate drive and 800 A, and a maximum power dissipation of 5000 W. The module operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Dual independent switch configuration for flexible circuit design
- High current handling capability suitable for heavy-duty applications
- Robust thermal performance with high power dissipation rating
Applications
- Industrial motor drives
- Medium-frequency inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and pin alignment against the AG-PRIME2 specification before installation. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage or contact corrosion prior to soldering.
Selection Notes
Select this module for applications requiring high current density and robust switching performance. Verify that the system cooling solution can manage the 5000 W power dissipation. Ensure the gate drive circuit provides the required 15 V level to achieve the specified saturation voltage characteristics.
Part Context
This component is part of Infineon's C series IGBT modules, designed for industrial power conversion. It utilizes advanced silicon technology to deliver high reliability in demanding environments. The AG-PRIME2 package offers optimized thermal resistance and mechanical stability for screw-mount installations.
Replacement Considerations
Check for direct substitutes within the same series or package family. Verify compatibility of pinout, thermal interface, and electrical ratings before substitution.
