FZ800R17KF6CB2NOSA1

Overview

The FZ800R17KF6CB2NOSA1 is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It features a nominal collector-emitter voltage of 1700 V and a continuous collector current rating of 800 A. The device utilizes Trenchstop technology to achieve low switching losses and improved thermal performance. Designed for robust industrial applications, the module integrates an anti-parallel fast recovery diode within a compact Econopack package, facilitating efficient heat dissipation and reliable operation under high-current conditions.

Feature Summary

• High current handling capability with 800 A continuous collector current rating
• Integrated anti-parallel fast recovery diode for efficient commutation
• Trenchstop technology implementation for optimized switching characteristics
• Econopack packaging design for compact integration and thermal management

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supplies (UPS) systems
• Induction heating equipment
• Medium voltage AC drive applications

Procurement Notes

Verify the specific suffix CB2 against the official Infineon datasheet to confirm pinout compatibility and terminal configuration. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Check for end-of-life status or obsolescence notices prior to finalizing orders, as availability may be limited. Confirm that the supplier offers appropriate warranty coverage for power semiconductor components.

Selection Notes

Select this module when designing circuits requiring high voltage blocking capability combined with substantial current capacity. Evaluate the thermal resistance parameters from the datasheet to ensure adequate heatsinking solutions are implemented. Consider the switching frequency limitations inherent to the Trenchstop technology when determining converter topologies. Verify gate drive requirements align with the specified threshold voltages for reliable triggering.

Part Context

This component belongs to Infineon's Econopack series of IGBT modules, which are engineered for medium to high-power applications. The FZ800R17KF6CB2NOSA1 represents a variant within the broader family of 1700V rated devices, offering enhanced current density compared to lower-rated counterparts. It serves as a critical power switching element in systems demanding high reliability and efficiency.

Replacement Considerations

Direct replacements must match the 1700V voltage class and 800A current rating while maintaining compatible pin configurations. Consult Infineon's cross-reference guides for updated modules with improved performance metrics. Ensure any substitute part maintains equivalent thermal characteristics and switching speeds to preserve system integrity.