FZ800R33KF2CB3S2NDSA1

Overview

The FZ800R33KF2C is a single IGBT inverter module rated for 3300 V collector-emitter voltage and 800 A continuous DC collector current at 80°C case temperature. It features an AlSiC baseplate with internal AlN insulation, providing high thermal conductivity and electrical isolation. The module includes a complementary diode with a repetitive peak reverse voltage of 3300 V and a forward current of 800 A. Key electrical parameters include a maximum short-circuit withstand current of 4000 A for up to 10 µs, a total power dissipation of 9.6 kW, and a junction-to-case thermal resistance of 13.0 K/kW per IGBT. Operating temperatures range from -40°C to +150°C.

Feature Summary

• High-voltage capability designed for demanding industrial and traction applications
• Robust construction utilizing an AlSiC baseplate for superior thermal management
• Integrated fast recovery diode optimized for inverter topologies
• Short-circuit robustness ensuring protection against fault conditions

Applications

• Industrial motor drives and inverters
• Traction systems for electric vehicles and rail transport
• Medium voltage AC/DC converters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation before procurement. Suffixes such as B3S2NDSA1 may indicate specific packaging, tape-and-reel configurations, or regional compliance variations that do not alter the core electrical function but affect physical handling. Confirm availability status directly with authorized distributors, as this component series may be subject to lifecycle changes or limited stock constraints.

Selection Notes

Select this module for applications requiring high blocking voltage and significant current capacity within a compact footprint. Ensure the cooling system can maintain the case temperature below 80°C to sustain the 800 A rating. Verify gate drive requirements align with the specified threshold and charge values. Consider the stray inductance of 12 nH when designing the PCB layout to minimize voltage overshoot during switching transitions.

Part Context

This component belongs to Infineon's high-power IGBT module portfolio, specifically engineered for medium-voltage applications. It utilizes TRENCHSTOP™ technology to balance switching losses and conduction drops. The module is part of a broader family of high-voltage solutions used in heavy-duty industrial machinery and renewable energy infrastructure where reliability under extreme electrical stress is critical.

Replacement Considerations

Direct replacements must match the 3300 V / 800 A rating and AlSiC baseplate form factor. Check datasheets for equivalent modules from the same manufacturer or competitors offering identical pinouts and thermal characteristics. Ensure any substitute supports similar short-circuit withstand times and gate drive thresholds to avoid circuit redesign.