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Product Detailed Parameters
- Description：IGBT MODULE 3300V 1A 9600W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：1:00 AM
- Power - Max：9600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：100 nF @ 25 V
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Overview
The FZ800R33KF2CS1NDSA1 is a single IGBT module with an integrated anti-parallel diode, rated for a collector-emitter voltage of 3300 V and a continuous DC collector current of 800 A at 80°C case temperature. It features a maximum repetitive peak collector current of 1600 A and total power dissipation of 9.6 kW at 25°C. The module utilizes an AlSiC baseplate material and incorporates internal isolation via Aluminum Nitride (AlN). Key electrical parameters include a typical collector-emitter saturation voltage of 4.25 V at 800 A and 125°C junction temperature, alongside a gate threshold voltage ranging from 4.2 V to 6.0 V.
Feature Summary
- High-voltage capability designed for demanding industrial power conversion applications
- Robust thermal management architecture utilizing an aluminum silicon carbide baseplate
- Integrated fast recovery diode providing efficient commutation in inverter circuits
Applications
- Industrial motor drives and frequency converters
- Medium voltage AC/DC power supplies
- Uninterruptible power supply systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Confirm availability through authorized distributors as standard stock levels may vary. Ensure all technical specifications align with your system requirements before finalizing procurement orders.
Selection Notes
Select this component for high-power applications requiring robust 3300 V blocking capabilities. Evaluate thermal resistance values carefully to ensure adequate heatsinking for the specified 800 A continuous current rating. Verify that the switching characteristics match the desired PWM frequency and gate drive circuitry constraints.
Part Context
This part belongs to the Infineon FZ series of high-power IGBT modules. It represents a mature technology platform designed for heavy-duty industrial environments. The module integrates both the switching element and the freewheeling diode into a single compact package to simplify circuit layout and improve reliability.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain identical voltage ratings, current capacities, and mounting dimensions to guarantee mechanical and electrical compatibility within existing assemblies.
