ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：HV B SINGLE SWITCH POWER MODULES
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.65V @ 15V, 825A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-IHVB130-3
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：825 A
- Power - Max：2400000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：93.5 nF @ 25 V
Download product information
Overview
The FZ825R33HE4DBPSA1 is an IHM-B module containing a Trench/Fieldstop IGBT4 and four emitter-controlled diodes. It features a collector-emitter voltage of 3300 V, a continuous DC collector current of 825 A at 105 °C case temperature, and a repetitive peak current of 1650 A. The typical saturation voltage is 2.40 V at 25 °C. Thermal resistance from junction to case is 18.0 K/kW for the IGBT and 25.2 K/kW for the diode. The module utilizes an AlSiC base plate and operates within a junction temperature range of -40 °C to 150 °C.
Feature Summary
- High short-circuit capability and high DC stability
- AlSiC base plate for increased thermal cycling capability
- Low switching losses with low gate charge
- Positive temperature coefficient for V CE,sat
Applications
- High-power converters
- Medium-voltage converters
- Motor drives
- Traction drives
- UPS systems
- Active frontend (energy recovery)
Procurement Notes
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component meets all relevant industrial qualification standards such as IEC 60747, 60749, and 60068 before integration into final designs.
Selection Notes
Select this module for applications requiring robust performance in high-power environments. Consider the thermal resistance values and the AlSiC base plate when designing heat sinks. Verify that the drive circuitry can handle the specified gate charge and peak currents safely.
Part Context
This component belongs to the Infineon IHM-B series, designed for high-power density applications. It integrates advanced Trench/Fieldstop IGBT4 technology with emitter-controlled diodes to optimize switching performance and reliability in demanding industrial and traction scenarios.
Replacement Considerations
Check for compatible modules within the same IHM-B family or other Infineon high-voltage IGBT modules with similar electrical ratings and mechanical dimensions. Ensure thermal and electrical characteristics match the original design requirements.
