FZ900R12KE4HOSA1

Overview

The FZ900R12KE4HOSA1 is a single IGBT module from Infineon's Trenchstop IGBT4 series, utilizing silicon technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 900 A at 95°C case temperature. The maximum repetitive peak collector current is 1800 A. At 25°C junction temperature, the typical collector-emitter saturation voltage (VCEsat) is 1.75 V. Total power dissipation reaches 4300 W at 25°C. Operating junction temperature ranges from -40°C to +150°C. The module includes an integrated emitter-controlled diode with a forward voltage of 1.90 V at 25°C.

Feature Summary

• Incorporates Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode technologies for low switching losses and high robustness.
• Features an isolated base plate made of copper with basic insulation using Al2O3, ensuring 4 kV AC isolation strength.
• Provides extended operation temperature range up to 150°C and positive temperature coefficient for VCEsat.
• Designed for high power density with standard housing and high creepage/clearance distances.

Applications

• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines

Procurement Notes

Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance details such as RoHS status or UL certification numbers. Confirm that the component matches the exact datasheet revision referenced in your design specifications. Ensure sourcing channels provide valid traceability records for industrial-grade components.

Selection Notes

Select this module for applications requiring high current handling up to 900 A and robust short-circuit capability. Consider the thermal resistance values for heatsink design, noting the junction-to-case resistance is 0.035 K/W per IGBT. Evaluate gate resistor requirements to manage switching speeds and minimize losses within the specified operating temperature limits.

Part Context

This component belongs to Infineon's 62mm C-Series module lineup, designed for high-power industrial applications. It utilizes the fourth generation of IGBT chip technology, offering improved performance over previous generations. The module integrates both the IGBT switch and the anti-parallel diode into a single package for compact inverter designs.

Replacement Considerations

FZ900R12KE4