FZT1151ATA

Single Bipolar Transistors Overview

The FZT1151ATA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT223 package. It features a collector-emitter breakdown voltage exceeding -40V and supports a continuous collector current of -3A with a peak pulse current of -5A. The device exhibits low saturation voltage, specified as less than -140mV at -1A, and maintains high gain hold-up up to -5A. It operates within a temperature range of -55°C to +150°C and complies with AEC-Q101 standards for automotive applications.

Single Bipolar Transistors Feature Summary

• High continuous collector current capability of -3A with peak pulse support reaching -5A
• Low saturation voltage performance ensuring efficient switching operations
• High DC current transfer ratio maintained across wide load ranges up to -5A
• Qualified to AEC-Q101 standards for high reliability in automotive environments

Single Bipolar Transistors Applications

• Solenoid drivers
• Relay drivers
• Actuator drivers
• DC modules
• Motor control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'ATA' corresponds to the AEC-Q101 compliance level and reel packaging quantity of 1,000 units per 7-inch reel. Confirm that the matte tin plated leads meet solderability requirements per MIL-STD-202 Method 208. Ensure the procurement channel sources genuine Diodes Incorporated products to maintain quality assurance and traceability standards.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust PNP switching with high current handling capabilities in a surface-mount format. The SOT223 package provides adequate thermal dissipation for medium power applications. Consider the low saturation voltage for minimizing power loss in high-current paths. Verify that the -40V rating aligns with the maximum circuit voltages to prevent breakdown under transient conditions.

Single Bipolar Transistors Part Context

This part belongs to the FZT series of medium power transistors from Diodes Incorporated, designed for general-purpose switching and amplification. The complementary NPN counterpart is the FZT1051A. Both devices share similar mechanical dimensions and thermal characteristics, facilitating balanced design in push-pull configurations or bridge driver topologies.

Single Bipolar Transistors Replacement Considerations

The FZT1051A serves as the direct complementary NPN type within the same product family. For replacements, verify that alternative PNP transistors match the -3A continuous current rating and -40V breakdown voltage. Ensure the replacement package matches the SOT223 footprint and pinout configuration to maintain board compatibility.

Single Bipolar Transistors FAQ

What is the maximum power dissipation of the FZT1151ATA?

The maximum power dissipation is 3.0W when mounted on a 52mm x 52mm 2oz copper single-sided FR4 PCB under still air conditions.

Is the FZT1151ATA suitable for automotive applications?

Yes, the FZT1151ATA is qualified to AEC-Q101 standards for high reliability and is PPAP capable for use in automotive applications.

What is the typical DC current gain (hFE) at -3A collector current?

At a collector current of -3A and VCE of -2V, the DC current gain (hFE) typically ranges from 100 to 190.