G05NP06S2

$0.14

Description：MOSFET N/P-CH 60V 5A/3.1A 8SOP
Series：TrenchFET®

SKU:4eb5a5ba994b Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G05NP06S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N/P-CH 60V 5A/3.1A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G05NP06S2

Description：MOSFET N/P-CH 60V 5A/3.1A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5A (Tc), 3.1A (Tc)
Rds On (Max) @ Id, Vgs：36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1336pF @ 30V, 1454pF @ 30V
Power - Max：2.5W (Tc), 1.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G05NP06S2

G05NP06S2

FET, MOSFET Arrays Overview

The G05NP06S2 is a dual N and P channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The NMOS provides a drain-source voltage of 60V, continuous current of 5A, and maximum RDS(on) of 36mΩ at VGS=10V. The PMOS offers -60V breakdown, -3.1A current, and maximum RDS(on) of 80mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Dual complementary N and P channel configuration in a single package
Advanced trench technology for optimized conduction and switching performance
RoHS compliant construction

FET, MOSFET Arrays Applications

Power switches
DC/DC converters
Level shifted high side switches

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Goford Semiconductor datasheet to confirm pinout alignment and electrical ratings match the design requirements. Ensure the SOP-8 Dual package dimensions are compatible with the PCB footprint. Confirm RoHS compliance status if required by specific environmental regulations.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring matched N and P channel pairs in a compact form factor. The device is suitable for low-voltage power management where moderate current handling is sufficient. Consider thermal resistance values when designing heat dissipation strategies for the SOP-8 package.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of trench MOSFETs designed for general-purpose power switching. It serves as a complementary pair solution, simplifying circuit design for half-bridge or synchronous rectification topologies compared to using discrete single-channel devices.