G085C03D32

FET, MOSFET Arrays Overview

The G085C03D32 is a dual-channel enhancement mode power MOSFET from Goford Semiconductor, integrating N-channel and P-channel devices in a DFN3X3-8L package. The NMOS provides a drain-source voltage of 30V and continuous current of 28A with on-resistance below 11mΩ at VGS=10V. The PMOS offers -30V and -12A with resistance under 23mΩ at VGS=-10V. Both channels feature low gate charge and are rated for junction temperatures up to 150°C.

FET, MOSFET Arrays Feature Summary

• Integrates identical low-side and high-side switches within a single compact footprint
• Utilizes advanced trench technology to achieve low on-resistance and reduced gate charge
• Subjected to 100% avalanche testing to ensure robustness against transient energy events

FET, MOSFET Arrays Applications

• Power switching circuits
• DC/DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as the standard reel quantity is 5000 pieces. Confirm that the marking code corresponds to the intended device variant. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Check RoHS compliance status if environmental regulations apply to the final assembly.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a dual-channel solution in a small outline package. The symmetric design simplifies driver circuit requirements for half-bridge or synchronous buck applications. Evaluate thermal performance based on the specified junction-to-case resistance to ensure adequate heat dissipation in the target enclosure.

FET, MOSFET Arrays Part Context

This dual MOSFET belongs to Goford Semiconductor's lineup of trench technology devices designed for efficient power management. It serves as an alternative to discrete N and P-channel pairs, reducing board area and component count. The device targets modern consumer electronics and industrial control systems requiring reliable switching performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 30V rating, DFN3X3-8L package, and complementary N/P channel configuration. Verify pinout compatibility and thermal characteristics before integration into existing designs.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current capability?

The NMOS supports a pulsed current of 112A, while the PMOS supports 48A, limited by the maximum junction temperature.

Is the device suitable for high-frequency switching?

Yes, the low gate charge and fast switch times support high-frequency operation in DC/DC converters.

How does the package affect thermal performance?

The DFN3X3-8L package provides a junction-to-case thermal resistance of 9.6°C/W for the NMOS and 4.2°C/W for the PMOS, facilitating efficient heat transfer to the PCB.