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G120N02D32 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N+N-CH 20V 26A 15W 11M(MA. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G120N02D32
- Description：MOSFET N+N-CH 20V 26A 15W 11M(MA
- Series：G
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1120pF @ 10V
- Power - Max：15W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (3x3)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G120N02D32
FET, MOSFET Arrays Overview
The G120N02D32 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 20 V and a continuous drain current of 26 A at 25°C case temperature. On-resistance is specified as less than 11 mΩ at VGS = 4.5V and less than 14 mΩ at VGS = 2.5V. It is housed in a DFN3X3-8L package with a maximum junction-to-case thermal resistance of 8.3 °C/W.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with identical low-side and high-side switch characteristics
- Advanced trench technology for optimized conduction and switching performance
- 100% avalanche tested for enhanced ruggedness
FET, MOSFET Arrays Applications
- Power switches
- DC/DC converters
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision (A2027.06-V1.2) matches your design requirements. Confirm that the DFN3X3-8L package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance under your operating conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage applications. The 20 V rating suits systems operating within this voltage range. Consider the low gate charge for efficiency in high-frequency switching environments. Verify that the 26 A current capability meets peak load demands.
FET, MOSFET Arrays Part Context
This part belongs to Goford Semiconductor's lineup of trench technology MOSFETs designed for general-purpose power switching. The dual configuration allows for simplified circuit designs in half-bridge or synchronous rectifier topologies. It targets applications requiring space-efficient packaging and reliable performance.
FET, MOSFET Arrays Replacement Considerations
No public substitute part numbers are documented for this specific model.
FET, MOSFET Arrays FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 104 A.
Is the device rated for avalanche operation?
Yes, the G120N02D32 is 100% avalanche tested.
What is the reverse recovery time of the body diode?
The reverse recovery time is typically 10 ns.
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