G130N06S2

$1.26

Description：MOSFET 2N-CH 60V 9A 8SOP
Series：TrenchFET®

SKU:58b2be967f17 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G130N06S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2N-CH 60V 9A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G130N06S2

Description：MOSFET 2N-CH 60V 9A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3021pF @ 30V
Power - Max：2.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G130N06S2

G130N06S2

FET, MOSFET Arrays Overview

The G130N06S2 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a 60V drain-source voltage rating and a continuous drain current of 9A at VGS = 10V. On-resistance is specified as less than 15mΩ at VGS = 10V and less than 17mΩ at VGS = 4.5V. It is housed in an SOP-8 Dual package and is rated for operation within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with identical low-side and high-side switches
Advanced trench technology providing low gate charge and excellent RDS(ON)
100% avalanche tested for enhanced ruggedness

FET, MOSFET Arrays Applications

Power switch applications
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (e.g., A1747-V1.1) against your design requirements, as electrical characteristics may vary between revisions. Confirm that the SOP-8 Dual package footprint matches your PCB layout constraints. Ensure thermal management strategies account for the 48°C/W junction-to-ambient resistance when designing for continuous operation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring two matched N-channel switches in a compact surface-mount package. The low gate charge facilitates efficient driving in high-frequency switching applications. Verify that the 60V breakdown voltage provides sufficient margin for your specific circuit rail voltages and transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of trench technology MOSFETs designed for general-purpose power switching. The dual configuration allows for simplified half-bridge or synchronous rectifier implementations without requiring separate components for each channel.