G170P03S2

FET, MOSFET Arrays Overview

The G170P03S2 is a dual P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of -30V and a continuous drain current of -11A at 25°C case temperature. On-resistance is specified as less than 18mΩ at VGS=-10V and less than 25mΩ at VGS=-4.5V. It is housed in an SOP-8 package with a junction-to-ambient thermal resistance of 50°C/W.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration providing two identical switches within a single package
• Advanced trench technology for optimized conduction and switching performance
• 100% avalanche tested for enhanced reliability under transient conditions

FET, MOSFET Arrays Applications

• Power switch circuits
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, such as reel quantities or tape specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into manufacturing processes. Ensure thermal management design accounts for the specified junction-to-ambient resistance values under actual operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual independent P-channel switching in a compact surface-mount footprint. Evaluate the -30V breakdown voltage and -11A continuous current limits against peak load requirements. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on at lower gate voltages if necessary.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's dual MOSFET series designed for general-purpose power switching. It shares the SOP-8 dual package form factor with other devices in the lineup but offers specific electrical characteristics tailored for low-voltage DC/DC conversion and load switching tasks.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same manufacturer's portfolio that match the -30V rating and SOP-8 dual package dimensions. Verify that any substitute maintains equivalent RDS(ON) limits and thermal resistance specifications to ensure circuit compatibility.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G170P03S2?

The maximum pulsed drain current (IDM) is -44 A.

Is the G170P03S2 suitable for high-frequency switching applications?

Yes, it features low gate charge and fast switching times, making it suitable for various switching applications including DC/DC converters.

What is the body diode reverse recovery time?

The reverse recovery time (Trr) is typically 10 ns when tested at IF = -5A and di/dt = -100A/us.