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G18NP06Y is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N/P-CH 60V 18A TO252-4. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G18NP06Y
- Description：MOSFET N/P-CH 60V 18A TO252-4
- Series：-
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Rds On (Max) @ Id, Vgs：35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 30V, 2610pF @ 30V
- Power - Max：45W (Tc), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G18NP06Y
FET, MOSFET Arrays Overview
The G18NP06Y is a dual N and P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The NMOS channel supports a drain-source voltage of 60V and continuous current of 18A, with an on-resistance under 35mΩ at 10V gate drive. The PMOS channel provides -60V breakdown and -18A current capability, featuring an on-resistance below 45mΩ at -10V. Both channels are rated for 100% avalanche testing.
FET, MOSFET Arrays Feature Summary
- Dual configuration integrating identical low-side and high-side switches within a single package
- Advanced trench technology designed to minimize conduction losses and switching energy
- Robust avalanche performance validated through 100% destructive testing protocols
FET, MOSFET Arrays Applications
- Power switch circuits
- DC/DC converters
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision (A1495-V1.2) matches your design requirements. Confirm thermal management strategies align with the junction-to-case resistance values provided in the absolute maximum ratings. Ensure gate drive voltages remain within the specified limits for both NMOS and PMOS channels to maintain safe operation area boundaries during switching transitions.
FET, MOSFET Arrays Selection Notes
Select this component when space-constrained designs require matched complementary switching pairs. The TO-252-4 Dual package offers a compact footprint suitable for surface-mount assembly. Evaluate the total gate charge parameters against your driver capabilities to optimize switching frequency efficiency. Consider the thermal impedance characteristics for heat dissipation planning in enclosed environments.
FET, MOSFET Arrays Part Context
This device belongs to Goford Semiconductor's lineup of trench technology MOSFETs. It serves as a complementary pair solution, eliminating the need to match separate discrete components. The dual architecture ensures consistent electrical characteristics between the high-side and low-side switches, simplifying circuit layout and improving overall system reliability compared to mixed-source alternatives.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are available in the source documentation.
FET, MOSFET Arrays FAQ
What is the maximum avalanche energy rating for the NMOS channel?
The NMOS channel has a minimum avalanche energy rating of 20 mJ when tested until failure under specified conditions.
How does the PMOS on-resistance vary with gate voltage?
The PMOS on-resistance is specified as less than 45 mΩ when driven at -10V gate-source voltage.
Is the device RoHS compliant?
Yes, both the NMOS and PMOS channels within the G18NP06Y are RoHS compliant.
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