G220P03S2

$0.59

Description：MOSFET 2P-CH 30V 9A 8SOP
Series：-

SKU:ab870412e67b Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G220P03S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2P-CH 30V 9A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G220P03S2

Description：MOSFET 2P-CH 30V 9A 8SOP
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1277pF @ 15V
Power - Max：2.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G220P03S2

G220P03S2

FET, MOSFET Arrays Overview

The G220P03S2 is a dual P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and reduced gate charge within a compact SOP-8 Dual package. The device supports a drain-source voltage of -30V and continuous drain current of -9A at 25°C. Key electrical parameters include an on-resistance of less than 22mΩ at VGS=-10V and less than 30mΩ at VGS=-4.5V. The component features 100% avalanche testing, a maximum power dissipation of 2.7W, and operates across a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration with identical high-side and low-side switches in a single package
Advanced trench technology for optimized conduction and switching performance
100% avalanche tested for enhanced reliability under transient conditions

FET, MOSFET Arrays Applications

Power switch circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'S2' against official manufacturer documentation to confirm exact packaging and marking details. Ensure compatibility with SOP-8 Dual footprint requirements during PCB layout. Confirm thermal management strategies align with the specified junction-to-ambient thermal resistance values provided in the datasheet.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring integrated dual P-channel switching in a space-constrained environment. Evaluate the trade-off between the 2.7W power dissipation limit and the required thermal management solution. Consider the gate charge characteristics when designing drive circuits for target switching frequencies.

FET, MOSFET Arrays Part Context

This device belongs to Goford Semiconductor's lineup of trench technology MOSFETs designed for efficient power conversion. The dual configuration simplifies circuit design by providing matched pairs for half-bridge or synchronous rectification topologies without requiring separate component placement.