G2K2P10S2E

$0.99

Description：MOSFET 2P-CH 100V 3.5A 8SOP
Series：TrenchFET®

SKU:ba4c07f92e26 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G2K2P10S2E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2P-CH 100V 3.5A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G2K2P10S2E

Description：MOSFET 2P-CH 100V 3.5A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Rds On (Max) @ Id, Vgs：200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1623pF @ 50V
Power - Max：3.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G2K2P10S2E

G2K2P10S2E

FET, MOSFET Arrays Overview

The G2K2P10S2E is a dual P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a -100V drain-source voltage rating and supports a continuous drain current of -3.5A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 200mΩ at VGS=-10V and 220mΩ at VGS=-4.5V. Total gate charge is typically 23nC. The component operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration with identical high-side and low-side switches
Advanced trench technology for optimized switching performance
100% avalanche tested for ruggedness
ESD protection rated at 7KV (HBM)

FET, MOSFET Arrays Applications

Power switch circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details, as variations may exist between tape-and-reel quantities and other configurations. Ensure that the requested part number matches the exact marking code and pin assignment defined in the latest datasheet revision to prevent integration errors during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual-switch solutions with moderate voltage ratings. The SOP-8 package facilitates surface-mount assembly while providing adequate thermal dissipation for low-power conversion tasks. Evaluate the gate charge requirements against driver capabilities to ensure efficient switching speeds are maintained under varying load conditions.

FET, MOSFET Arrays Part Context

This device belongs to Goford Semiconductor's lineup of dual MOSFET arrays designed for space-constrained designs. It serves as a consolidated alternative to discrete single-channel components, reducing board space and simplifying layout. The dual configuration ensures matched characteristics for bridge or half-bridge topologies.