G33N03D3

$0.13

Description：MOSFET 2N-CH 30V 30A 8DFN
Series：TrenchFET®

SKU:2cfac0eab7d5 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G33N03D3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2N-CH 30V 30A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G33N03D3

Description：MOSFET 2N-CH 30V 30A 8DFN
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Rds On (Max) @ Id, Vgs：11mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：837pF @ 15V
Power - Max：13W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (3x3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G33N03D3

G33N03D3

FET, MOSFET Arrays Overview

The G33N03D3 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 30V and a continuous drain current of 28A at 25°C case temperature. On-resistance is specified as less than 11mΩ at VGS=10V and less than 14mΩ at VGS=4.5V. It is housed in an 8-lead DFN3x3 package with a maximum junction-to-case thermal resistance of 9.5°C/W.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration providing identical high-side and low-side switch characteristics for bridge applications.
Advanced trench technology designed to minimize on-resistance and reduce gate charge requirements.
100% avalanche tested to ensure robustness against high-voltage transient events.

FET, MOSFET Arrays Applications

Power switching circuits
DC/DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to confirm packaging format, such as tape and reel quantities or cut tape availability. Confirm RoHS compliance status directly from the manufacturer's latest documentation before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact dual-N channel solution within a 30V system. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify that the PCB copper area supports the required thermal dissipation given the 9.5°C/W junction-to-case rating.

FET, MOSFET Arrays Part Context

This part belongs to the Goford Semiconductor discrete semiconductor lineup, specifically categorized under dual-channel MOSFETs. It is designed for surface-mount assembly using the DFN3x3-8L package, targeting space-constrained power management applications.