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G3F09MT12FB2-T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 9M HALF-BRIDGE SICPAK F SI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F09MT12FB2-T
- Description：1200V 9M HALF-BRIDGE SICPAK F SI
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F09MT12FB2-T
FET, MOSFET Arrays Overview
The G3F09MT12FB2-T is a Silicon Carbide (SiC) MOSFET half-bridge module from the SiCPAK F series, manufactured by GeneSiC Semiconductor. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 9 milliohms. The device utilizes press-fit installation within a robust SiCPAK package designed for high-power applications. It supports continuous operation across an extended temperature range from -40°C to +175°C, ensuring reliability in harsh environments.
FET, MOSFET Arrays Feature Summary
- Utilizes Trench-Assisted Planar (TAP) technology for enhanced performance
- Features a robust SiCPAK F packaging format for reliable thermal management
- Designed specifically for critical high-power and harsh-environment applications
FET, MOSFET Arrays Applications
- High-power industrial motor drives
- Solar inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official documentation to confirm inclusion of Thermal Interface Material (TIM). Confirm that the ordering part number matches the exact electrical parameters required for the target design. Ensure compatibility with press-fit mounting processes during integration.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring low conduction losses and high voltage tolerance in compact modules. Evaluate the thermal resistance characteristics relative to the system's cooling strategy. Consider the switching speed capabilities when designing gate drive circuits to optimize efficiency and minimize electromagnetic interference.
FET, MOSFET Arrays Part Context
This module belongs to the G3F series of Silicon Carbide power devices. It represents a transition to advanced packaging solutions that integrate multiple discrete components into a single, optimized unit. The SiCPAK F series is engineered to provide superior thermal conductivity and mechanical stability compared to traditional discrete assemblies.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes are not explicitly confirmed in the provided data. Verify pinout compatibility and thermal interface requirements before considering alternative half-bridge modules from other manufacturers or different series within the same product line.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
