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G3F09MT12GB4-T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 9M FULL-BRIDGE SICPAK G SI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F09MT12GB4-T
- Description：1200V 9M FULL-BRIDGE SICPAK G SI
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F09MT12GB4-T
FET, MOSFET Arrays Overview
The G3F09MT12GB4-T is a silicon carbide (SiC) MOSFET module manufactured by GeneSiC Semiconductor. It features a full-bridge configuration within the SiCPAK G package, utilizing press-fit installation. The device supports a drain-source breakdown voltage of 1.2 kV and delivers a continuous drain current of 104 A. Its on-resistance is specified at 12.5 mOhms. Thermal performance includes a power dissipation rating of 216 W, with an operating temperature range from -40°C to +175°C. Physical dimensions are 65 mm in length, 56 mm in width, and 12 mm in height.
FET, MOSFET Arrays Feature Summary
- Full-bridge topology integrating four N-channel SiC MOSFETs for efficient power conversion
- Press-fit mounting interface designed for secure connection and optimized thermal transfer
- Top-side cooling capability integrated into the SiCPAK G module structure
FET, MOSFET Arrays Applications
- High-frequency DC-DC converters
- Motor drive inverters
- Industrial power supplies
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'B4' against official datasheets to confirm terminal plating and material specifications. Confirm that the required application utilizes press-fit technology rather than soldering. Ensure thermal management solutions align with the 216 W dissipation rating. Validate RoHS compliance status through the manufacturer's latest documentation before integration.
FET, MOSFET Arrays Selection Notes
Select this component when a compact full-bridge arrangement is required for high-voltage applications. The low on-resistance supports high-efficiency operation at elevated temperatures. Consider the physical footprint constraints of the SiCPAK G package during PCB layout. Evaluate gate drive requirements compatible with the threshold voltage characteristics of the internal devices.
FET, MOSFET Arrays Part Context
This module belongs to the SiCPAK F series of silicon carbide power modules. It represents a transition toward higher integration levels compared to discrete components. The design focuses on reducing parasitic inductance and improving switching performance. It serves as a building block for advanced power electronics systems requiring robust high-temperature operation.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution lists for equivalent full-bridge SiC modules. Verify pin compatibility and thermal interface requirements when considering alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
