G3F17MT12FB2

$83.39

Description：1200V 17M HALF-BRIDGE SICPAK F S
Series：-

SKU:5998237e9ac8 Category: FET, MOSFET Arrays Brand: GeneSiC Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

G3F17MT12FB2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 17M HALF-BRIDGE SICPAK F S. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G3F17MT12FB2

Description：1200V 17M HALF-BRIDGE SICPAK F S
Series：-
Mfr：GeneSiC Semiconductor
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G3F17MT12FB2

G3F17MT12FB2

FET, MOSFET Arrays Overview

The G3F17MT12FB2 is a silicon carbide (SiC) MOSFET module manufactured by GeneSiC Semiconductor, part of the SiCPAK F series. It features a half-bridge configuration with dual N-channel transistors housed in a press-fit SiCPAK package measuring 65 mm in length, 34 mm in width, and 12 mm in height. The device supports a drain-source breakdown voltage (Vds) of 1.2 kV and offers a continuous drain current (Id) of 68 A. Its typical on-resistance (Rds(on)) is 23 mOhms, with a gate threshold voltage (Vgs(th)) of 2.2 V. Operating temperatures range from -40°C to +175°C, with power dissipation rated at 170 W. Switching characteristics include an rise time of 18 ns and a fall time of 26 ns.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide technology for high-voltage operation up to 1.2 kV.
Employs a robust SiCPAK F packaging format designed for press-fit installation.
Integrates a half-bridge topology within a compact dual-module structure.

FET, MOSFET Arrays Applications

High-power industrial motor drives
Uninterruptible power supply (UPS) systems
Solar inverters and renewable energy converters

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as listings may attribute the component to either GeneSiC Semiconductor or Navitas Semiconductor due to corporate acquisition history. Confirm that the specific ordering suffix matches the required electrical parameters and packaging type. Ensure compatibility with press-fit mounting requirements specified for the SiCPAK F series before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a half-bridge SiC solution is required with moderate current handling around 68 A. The 23 mOhm on-resistance balances conduction losses against switching performance. Consider the 175°C maximum junction temperature for thermal management design. Verify that the system architecture supports the specific gate threshold voltage and switching speeds provided in the datasheet.

FET, MOSFET Arrays Part Context

This module belongs to the G3F series of silicon carbide power devices, representing advanced generation trench-assisted planar technology. The SiCPAK F family focuses on providing reliable, high-power modules for harsh environments. It serves as a discrete alternative to traditional IGBT modules, offering superior efficiency in high-frequency switching applications.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same series include the G3F09MT12FB2 for lower resistance applications or the G3F18MT12FB4 for full-bridge configurations. Cross-series substitution requires careful evaluation of pinout compatibility and thermal interface specifications between different SiCPAK variants.