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G3F18MT12FB4-T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 18M FULL-BRIDGE SICPAK F S. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F18MT12FB4-T
- Description：1200V 18M FULL-BRIDGE SICPAK F S
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F18MT12FB4-T
FET, MOSFET Arrays Overview
The G3F18MT12FB4-T is a silicon carbide (SiC) MOSFET module from the SiCPAK F series, manufactured by GeneSiC Semiconductor. It features a full-bridge configuration with four N-channel devices in a press-fit package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 53 A. The on-resistance is specified at 24 mOhms, with a gate threshold voltage of 2.2 V. Operating temperatures range from -40°C to +175°C, and power dissipation is rated at 106 W. Switching characteristics show rise and fall times of 16 ns and 26 ns, respectively.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide technology for high-temperature operation up to 175°C
- Integrates a full-bridge topology within a single SiCPAK F module
- Designed for press-fit installation to simplify mechanical assembly
FET, MOSFET Arrays Applications
- High-frequency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official documentation to confirm tape-and-reel packaging versus tray distribution. Confirm thermal interface material requirements and mounting torque specifications for the press-fit pins. Ensure compatibility with standard gate driver voltages given the 2.2 V threshold. Cross-reference the manufacturer part number with the latest datasheet revision to validate all electrical limits.
FET, MOSFET Arrays Selection Notes
Select this component when a compact full-bridge solution is required for high-voltage applications. The SiCPAK F package offers a balance between current handling and switching speed. Consider the 24 mOhm on-resistance for conduction loss calculations. Verify that the 53 A continuous current rating meets the peak load requirements of the target circuit design.
FET, MOSFET Arrays Part Context
This module belongs to the G3F series of silicon carbide power modules. It shares the SiCPAK F form factor with other variants in the lineup. The full-bridge configuration integrates multiple switches to reduce parasitic inductance compared to discrete solutions. It is designed to replace traditional silicon-based bridge modules in efficiency-critical designs.
FET, MOSFET Arrays Replacement Considerations
Check for direct substitutes within the same SiCPAK F family with matching voltage and current ratings. Verify pinout compatibility if replacing with half-bridge or single-switch modules. Ensure thermal management solutions are adequate for the new component's power dissipation profile.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
