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G4614 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N/P-CH 40V 6A 8SOP. Review the specifications below when checking this part for your BOM.
The G4614 is a complementary N and P channel enhancement mode power MOSFET array manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage of 40V for the NMOS and -40V for the PMOS. Continuous drain current ratings are 6A for the NMOS and -7A for the PMOS at 25°C case temperature. The package is SOP-8 dual, suitable for surface mount applications.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your assembly process. Check the datasheet for moisture sensitivity level (MSL) handling instructions prior to soldering. Ensure thermal management design accounts for the junction-to-ambient resistance values provided in the absolute maximum ratings section.
Select this component for designs requiring a matched N/P pair in a compact footprint. Verify that the required continuous current does not exceed 6A for NMOS or 7A for PMOS under your thermal conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on). Consider the input capacitance differences between the N and P channels when designing high-speed switching circuits.
This part belongs to the G461 series of power MOSFET arrays from Goford Semiconductor. It is designed as a drop-in solution for applications needing both high-side and low-side switching capabilities within a limited board space. The SOP-8 dual package allows for efficient thermal dissipation compared to smaller packages while maintaining a standard footprint compatible with automated assembly lines.
No officially confirmed substitute part numbers are documented in the provided source material.
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