G4616

FET, MOSFET Arrays Overview

The G4616 is a complementary N- and P-channel enhancement mode power MOSFET array in an SOP-8 package. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The NMOS channel supports a drain-source voltage of 40V with a continuous current of 8A at VGS=10V, while the PMOS channel handles -40V and -7A at VGS=-10V. On-resistance is specified as less than 20mΩ for the NMOS and 35mΩ for the PMOS at 10V drive. Operating junction temperature ranges from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N- and P-channel configuration enables high-side switching applications
• Advanced trench technology provides low gate charge characteristics
• RoHS compliant construction

FET, MOSFET Arrays Applications

• Power switches
• DC/DC converters
• Level shifted high side switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking configurations. Confirm that the SOP-8 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or high-side driving within a 40V system. The low gate charge facilitates efficient switching in moderate frequency applications. Verify that the drive voltage meets the minimum thresholds for optimal on-resistance performance, particularly if operating below 10V gate drive.

FET, MOSFET Arrays Part Context

This device belongs to the Goford Semiconductor TrenchFET® series, which employs trench gate technology to optimize the trade-off between conduction losses and switching speed. The complementary nature of the N- and P-channel devices allows for compact circuit designs where space constraints preclude the use of discrete single-transistor solutions.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the NMOS channel?

The maximum continuous drain current for the NMOS channel is 8A at a case temperature of 25°C.

Does the G4616 include body diodes?

Yes, both the NMOS and PMOS channels feature intrinsic body diodes with specified forward voltages and continuous current ratings.

What is the recommended operating junction temperature range?

The operating junction and storage temperature range is -55°C to 150°C.