G4953S

$0.59

Description：MOSFET 2P-CH 30V 5A 8SOP
Series：TrenchFET®

SKU:b0d6c9abfab4 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G4953S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2P-CH 30V 5A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G4953S

Description：MOSFET 2P-CH 30V 5A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：520pF @ 15V
Power - Max：1.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G4953S

G4953S

FET, MOSFET Arrays Overview

The G4953S is a dual P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge characteristics. The device features a -30V drain-source voltage rating and supports a continuous drain current of -5A at VGS = -10V. On-resistance is specified as less than 45mΩ at VGS = -10V and less than 65mΩ at VGS = -4.5V. The component is housed in an SOP-8 Dual package and is designed for high-efficiency switching applications.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration with identical low-side and high-side switch capabilities
Advanced trench technology providing excellent RDS(ON) performance
Low gate charge for efficient switching operations
100% avalanche tested for enhanced reliability

FET, MOSFET Arrays Applications

Power switches
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer datasheet version (A1717-V1.0) when sourcing components. Confirm that the SOP-8 Dual package marking matches the 'G4953' identifier. Ensure compliance with RoHS standards as stated in the product description. Cross-reference absolute maximum ratings against system requirements before integration.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel switching within a compact footprint. The low thermal resistance facilitates heat dissipation in dense layouts. Verify gate drive voltages align with the specified thresholds for optimal conduction. Consider the pulsed drain current limits for transient load conditions during circuit design.

FET, MOSFET Arrays Part Context

This component belongs to the Goford Semiconductor power MOSFET portfolio, specifically utilizing trench technology for improved efficiency. It serves as a discrete solution for power management circuits where space constraints necessitate dual configurations in a single package.