G60N04D52

FET, MOSFET Arrays Overview

The G60N04D52 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a DFN5X6-8L package with a drain-source voltage of 40V and a continuous drain current of 60A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 9mΩ at VGS=10V and 12mΩ at VGS=4.5V. Total gate charge is typically 42nC, and the component is rated for a maximum junction temperature of 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with identical low-side and high-side switch characteristics
• Advanced trench technology providing low gate charge and enhanced switching performance
• DFN5X6-8L package designed for high thermal efficiency and compact footprint
• 100% avalanche tested for improved ruggedness in inductive load applications

FET, MOSFET Arrays Applications

• Power switches
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and packaging format against the manufacturer's official documentation before procurement. Confirm that the DFN5X6-8L package dimensions and pin assignment match the target PCB layout requirements. Ensure compliance with RoHS standards and check for any specific handling instructions related to moisture sensitivity level during storage and assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current density in a small surface-mount footprint. The dual configuration simplifies half-bridge or synchronous rectifier topologies. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Consider the gate charge specifications when designing gate drive circuits to optimize switching speeds and minimize driver losses.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual N-channel power MOSFETs from Goford Semiconductor. These devices are engineered for general-purpose power switching applications where space constraints and thermal performance are critical. The dual architecture allows for balanced switching characteristics between the two channels within a single package.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G60N04D52?

The maximum pulsed drain current (IDM) is 240 A.

Is the G60N04D52 avalanche rated?

Yes, the device is 100% avalanche tested.

What is the typical total gate charge (Qg) at VGS = 10V?

The typical total gate charge is 42 nC when tested at VDD = 20V and ID = 20A.