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G75P04D5I is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P-40V,-70A,RD(MAX). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for G75P04D5I
- Description：P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
- Series：-
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：106 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6414 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (4.9x5.75)
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for G75P04D5I
Single FETs, MOSFETs Overview
The G75P04D5I is a P-channel Power MOSFET manufactured by Goford Semiconductor, utilizing advanced trench technology. It features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 70 A at case temperature. The device offers a maximum on-resistance (Rds(on)) of less than 6.5 mΩ at -10 V gate-source voltage. It is housed in an 8-DFN surface-mount package with dimensions of 4.9x5.75 mm and supports a junction temperature range up to 150°C.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for low on-resistance
- High current handling capability
- Surface mount packaging
Single FETs, MOSFETs Applications
- Power management circuits
- Load switching applications
- DC-DC converter designs
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'I' against official Goford Semiconductor documentation to confirm exact electrical tolerances and marking codes. Ensure compatibility with the 8-DFN (4.9x5.75 mm) footprint during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before integration into regulated products.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current density in a compact surface-mount form factor. The low Rds(on) specification minimizes conduction losses in power paths. Verify that the 40 V rating exceeds the maximum circuit voltage and that the thermal design accommodates the 150 W power dissipation capability at case temperature.
Single FETs, MOSFETs Part Context
This part belongs to Goford Semiconductor's P-channel MOSFET lineup, which includes variants like G75P04S and G75P04F. These devices are designed for consumer, industrial, and automotive markets using TrenchFET technology. The G75P04D5I specifically targets high-current applications where space constraints necessitate the DFN package over larger TO-220 or standard SOP options.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with G75P04D5 or G75P04S only if pinout and electrical parameters match exactly per official datasheets.
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