G800N06S2

FET, MOSFET Arrays Overview

The G800N06S2 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 3A at 25°C. Key electrical parameters include a maximum RDS(on) of 80mΩ at VGS=10V and 85mΩ at VGS=4.5V, with a total gate charge of 6nC. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with identical high-side and low-side switch characteristics
• Advanced trench technology for optimized on-resistance and switching performance
• 100% avalanche tested for ruggedness in harsh environments

FET, MOSFET Arrays Applications

• Power switching circuits
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (A1704-V1.0) matches your design requirements. Confirm that the SOP-8 packaging aligns with your PCB footprint and assembly capabilities. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance under your expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage, moderate-current applications. The 60V rating suits systems where higher voltage margins are unnecessary. Consider the 3A continuous current limit and 1.7W power dissipation capability for thermal design constraints in space-limited enclosures.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of dual N-channel MOSFETs designed for general-purpose power switching. It complements other devices in the series offering similar voltage ratings but varying current capacities or package types, allowing designers to scale power handling while maintaining interface compatibility.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 60V VDS, 3A ID, and SOP-8 dual package. Verify pinout compatibility and ensure equivalent RDS(on) and Qg values to maintain circuit efficiency and switching speeds without redesigning the gate drive network.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G800N06S2?

The maximum pulsed drain current (IDM) is 12A, limited by the maximum junction temperature.

Is the G800N06S2 RoHS compliant?

Yes, the device is RoHS compliant as stated in the general features section of the datasheet.

What is the typical reverse recovery time (Trr) of the body diode?

The typical reverse recovery time (Trr) is 12ns, measured at IF=3A, VGS=0V, and di/dt=500A/us.