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GA01PNS150-220 is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is RF DIODE PIN 15000V. Review the specifications below when checking this part for your BOM.
RF Diode specifications for GA01PNS150-220
- Description：RF DIODE PIN 15000V
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：15000V
- Current - Max：1:00 AM
- Capacitance @ Vr, F：7pF @ 1000V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Package / Case：Axial
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for GA01PNS150-220
RF Diode Overview
The GA01PNS150-220 is a Silicon Carbide PiN diode manufactured by GeneSiC Semiconductor. It features a maximum repetitive peak reverse voltage of 15 kV and a continuous forward current rating of 1 A. The device operates within a temperature range of -55 °C to +175 °C. At 25 °C, the typical forward voltage is 6.4 V at 1 A. Reverse leakage current measures 20 µA maximum at 8 kV and 25 °C. Total reverse recovery charge is 558 nC under specified switching conditions. Switching time is less than 236 ns.
RF Diode Feature Summary
- Soft reverse recovery characteristics
- Ultra-fast high temperature switching
- Fast turn off capabilities
RF Diode Applications
- Voltage Multiplier circuits
- Ignition and Trigger Circuits
- Oil and Downhole equipment
- Lighting systems
- Defense applications
RF Diode Procurement Notes
Verify component authenticity through official GeneSiC Semiconductor channels or authorized distributors. Confirm RoHS compliance status via current datasheets. Ensure procurement specifications match the required 15 kV blocking capability and TO-220 package dimensions for proper integration into target designs.
RF Diode Selection Notes
Select this component when high-voltage rectification exceeding standard silicon limits is required. The SiC PiN technology supports operation up to 175 °C junction temperature. Evaluate thermal management requirements based on the 1 A continuous forward current rating and specific power dissipation constraints in the intended application environment.
RF Diode Part Context
This part belongs to the GeneSiC SiC PiN series, designed for extreme voltage environments. It represents commercial availability for high-voltage rectification tasks where traditional silicon devices fail. The product line focuses on ruggedness and reliability for specialized industrial and defense sectors requiring robust semiconductor solutions.
RF Diode Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the 15 kV reverse voltage rating, 1 A forward current capacity, and TO-220-2 package configuration to ensure electrical and mechanical compatibility.
RF Diode FAQ
What is the maximum operating temperature?
The maximum operating and storage temperature is 175 °C.
How does the forward voltage change with temperature?
The forward voltage decreases from a typical 6.4 V at 25 °C to 4.7 V at 175 °C when conducting 1 A.
What is the total reverse recovery charge?
The total reverse recovery charge is 558 nC at a junction temperature of 175 °C.
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