ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
GA01PNS80-220 is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is RF DIODE PIN 8000V. Review the specifications below when checking this part for your BOM.
RF Diode specifications for GA01PNS80-220
- Description：RF DIODE PIN 8000V
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：8000V
- Current - Max：2:00 AM
- Capacitance @ Vr, F：4pF @ 1000V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Package / Case：Axial
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for GA01PNS80-220
RF Diode Overview
The GA01PNS80-220 is a Silicon Carbide PiN diode manufactured by GeneSiC Semiconductor. It features an 8 kV repetitive peak reverse voltage and supports a continuous forward current of 2 A at a case temperature of 25 °C. The device operates within a junction temperature range of -55 to 175 °C. Electrical characteristics include a maximum forward voltage of 6.1 V at 2 A and 25 °C, with a typical total reverse recovery charge of 558 nC under specified switching conditions.
RF Diode Feature Summary
- Soft reverse recovery characteristics for reduced system complexity
- Ultra-fast high temperature switching capabilities
- RoHS compliant construction
RF Diode Applications
- Voltage Multiplier circuits
- Ignition and Trigger Circuits
- Oil and Downhole environments
- Lighting systems
- Defense applications
RF Diode Procurement Notes
Verify the specific ordering suffix against official GeneSiC documentation to confirm package type and compliance status. Confirm that the component meets all required environmental specifications for the intended operating temperature range before finalizing procurement orders.
RF Diode Selection Notes
Select this component for high-voltage applications requiring robust thermal performance up to 175 °C. Ensure the circuit design accommodates the specified forward voltage drop and reverse recovery characteristics to optimize efficiency in hard-switched or soft-switched topologies.
RF Diode Part Context
This part belongs to the SiC PiN Diode series from GeneSiC Semiconductor. It utilizes silicon carbide technology to achieve superior blocking voltage and thermal stability compared to traditional silicon devices, suitable for demanding industrial and defense environments.
RF Diode Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing circuit parameters if considering alternative manufacturers.
RF Diode FAQ
What is the maximum operating temperature?
The maximum operating and storage temperature is 175 °C.
What is the typical reverse recovery charge?
The typical total reverse recovery charge (Qrr) is 558 nC at Tj = 175 °C.
Is this component RoHS compliant?
Yes, the GA01PNS80-220 is RoHS compliant.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.
