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Product Detailed Parameters
- Description：TRANS SJT 1700V 8A TO247AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：1.7 kV
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：8:00 AM
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 800V
- Resistance - RDS(On)：230 mOhms
- Power - Max：48 W
- Operating Temperature：175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GA08JT17-247 is a 1700 V, 8 A GeneSiC Superjunction Transistor. It is designed for high-voltage power switching applications requiring robust performance. The device features static and dynamic characteristics validated across temperatures of 25 °C, 125 °C, and 175 °C. Parameter extraction was performed using IC-CAP to model output characteristics, capacitance versus voltage (C-V), and switching behavior. This component utilizes superjunction technology to optimize efficiency and thermal handling in demanding environments.
Feature Summary
- Utilizes GeneSiC Superjunction transistor architecture for enhanced voltage blocking and conduction.
- Validated static and dynamic electrical characteristics across a wide temperature range from 25 °C to 175 °C.
- Provides comprehensive modeling data including output characteristics and capacitance-voltage profiles.
Applications
- High-voltage power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify the specific manufacturer datasheet and parameter extraction reports for accurate electrical specifications. Confirm package type and pinout compatibility with existing PCB layouts. Ensure thermal management solutions support the operating temperature range up to 175 °C. Check for any recent updates to the superjunction technology or manufacturing processes that may affect performance metrics.
Selection Notes
Select this component for applications requiring 1700 V blocking capability with low on-resistance. Consider the thermal performance at elevated temperatures when designing heat sinks. Evaluate the switching characteristics against system frequency requirements. Compare the superjunction structure benefits against standard trench MOSFETs for efficiency gains in high-voltage scenarios.
Part Context
This device belongs to the GeneSiC Superjunction transistor family, leveraging silicon carbide technology for superior performance compared to traditional silicon devices. The superjunction design allows for higher breakdown voltages with reduced specific on-resistance. It is part of GeneSiC's portfolio aimed at improving power density and efficiency in high-voltage applications.
Replacement Considerations
No official substitute part numbers are publicly documented for this specific model. When considering alternatives, ensure the replacement matches the 1700 V rating, 8 A current capacity, and superjunction technology. Verify that the alternative device has comparable switching speeds and thermal characteristics to maintain system performance.
