GA50JT17-247

Overview

The GA50JT17-247 is a normally-off Silicon Carbide Junction Transistor (SJT) manufactured by GeneSiC Semiconductor. It features a TO-247 package with a drain-source voltage rating of 1700 V and a continuous drain current of 100 A at 25°C case temperature, reducing to 50 A at 145°C. The device exhibits a maximum on-resistance of 42 mΩ at 175°C and supports short-circuit withstand capability exceeding 20 µs. Thermal resistance from junction to case is 0.26 °C/W, enabling operation up to 175°C.

Feature Summary

• Gate oxide-free SiC construction providing exceptional safe operating area and positive temperature coefficient of RDS(on).
• Temperature-independent switching performance with excellent gain linearity and minimal input signal distortion.
• Compatible with standard Si MOSFET and IGBT gate drive ICs for simplified integration.

Applications

• Down hole oil drilling and geothermal instrumentation
• Hybrid electric vehicles (HEV)
• Solar inverters and switched-mode power supplies (SMPS)
• Power factor correction (PFC) and induction heating
• Motor drives and uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific revision status of the datasheet before finalizing designs, as electrical characteristics may be updated in newer versions. Confirm that the TO-247 mechanical dimensions match the target PCB footprint requirements. Ensure gate drive circuits are designed to handle the steady-state gate current requirements derived from the DC current gain specifications.

Selection Notes

Select this component for high-voltage applications requiring robust short-circuit tolerance and low conduction losses. Evaluate thermal management strategies based on the 0.26 °C/W junction-to-case resistance and the 583 W power dissipation limit at 25°C. Consider proportional gate drive topologies if optimizing for wide drain current ranges to minimize gate drive power consumption.

Part Context

This part belongs to the GeneSiC SJT family, utilizing a unique junction transistor architecture distinct from conventional MOSFETs. Unlike standard SiC MOSFETs, the SJT technology eliminates gate oxide reliability concerns while maintaining high-speed switching capabilities suitable for demanding industrial and automotive environments.

Replacement Considerations

Direct pin-compatible replacements within the same SJT family include devices with lower current ratings such as the GA03IDDJT30-FR4 evaluation board components or other GA-series parts. Cross-compatibility with SiC MOSFETs requires careful evaluation of gate drive topology changes due to differences in control mechanisms.

FAQ

How does the gate drive requirement differ from a standard MOSFET?

The GA50JT17-247 is a current-controlled device requiring a continuous positive gate current to remain in the on-state, unlike voltage-controlled MOSFETs which only require charge during transitions.

What is the maximum short-circuit withstand time?

The device supports a non-repetitive short-circuit withstand capability exceeding 20 µs when operated at a junction temperature of 175°C with a gate current of 1 A.

Can this device be driven directly by TTL logic?

Yes, it can be driven using direct 5 V TTL logic after current amplification, provided the supply current meets the steady-state gate current requirements calculated from the DC current gain.