GCMS020B120S1-E1

$32.30

Description：SIC 1200V 20M MOSFET & 50A SBD S
Series：-
Mfr：SemiQ
Package：Tube

SKU:9093c1bfaf81 Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：SIC 1200V 20M MOSFET & 50A SBD S
Series：-
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：215 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：5279 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：395W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

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GCMS020B120S1-E1

Overview

The SemiQ GCMS020B120S1-E1 is a QSiC™ 1200V SiC COPACK power module in an isolated SOT-227 package. It integrates a high-speed N-channel MOSFET with a freewheeling Schottky barrier diode (SBD). Key electrical parameters include a drain-source voltage of 1200 V, a continuous drain current of 105 A at TC=25°C, and a typical on-resistance of 18 mΩ. The device supports a junction temperature range from -55°C to 175°C, with a maximum power dissipation of 341 W.

Feature Summary

Integrates a high-speed switching SiC MOSFET with a freewheeling SiC SBD featuring zero reverse recovery.
Utilizes Kelvin reference connections for stable gate drive operation.
Features an isolated package design allowing direct mounting to heatsinks.
Optimized for low switching losses and low junction-to-case thermal resistance.

Applications

Photovoltaic inverters
Battery chargers
Server power supplies
Energy storage systems

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the SOT-227 mounting torque requirements are met within the system constraints. Ensure the driver circuitry accommodates the recommended operational gate voltage range of -5 V to +20 V for reliable switching performance.

Selection Notes

Select this component when a compact, integrated solution combining a MOSFET and a freewheeling diode is required. The isolated package simplifies mechanical layout by enabling direct heatsink attachment without additional insulators. Consider the thermal resistance values and derating curves to ensure adequate cooling for the intended continuous current load.

Part Context

This part belongs to the QSiC™ series of 1200V silicon carbide power modules manufactured by SemiQ. The series focuses on high-efficiency power conversion applications requiring fast switching speeds and robust thermal performance. The COPACK architecture combines discrete components into a single ruggedized module.