ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SIC 1200V 40M MOSFET & 15A SBD S
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：124 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：3110 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：242W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
Download product information
Overview
The GCMS040B120S1-E1 is a Silicon Carbide (SiC) MOSFET power module manufactured by SemiQ. It features a single N-Channel configuration housed in an SOT-227 package with screw mount installation. The device supports a drain-source breakdown voltage of 1200V and delivers a continuous drain current of 40A. Its on-resistance is specified at 40 milliohms, with a gate-source voltage range of -10V to +25V. Operating temperatures span from -40°C to +175°C, and the module includes an integrated freewheeling SiC Schottky Barrier Diode (SBD) characterized by zero reverse recovery.
Feature Summary
- Integrated freewheeling SiC Schottky Barrier Diode providing zero reverse recovery characteristics
- Low switching losses combined with low junction-to-case thermal resistance
- Advanced silicon carbide technology for efficient energy management
Applications
- Electric vehicle charging systems
- Induction heating equipment
- Industrial power supplies
Procurement Notes
Verify the specific datasheet revision and electrical parameters directly with SemiQ or authorized distributors before procurement. Confirm that the SOT-227 package dimensions and screw mounting requirements align with your mechanical design. Ensure thermal interface materials are compatible with the specified junction-to-case thermal resistance values for optimal heat dissipation performance.
Selection Notes
Select this component when high-efficiency switching and robust thermal performance are required in compact power modules. The integrated diode simplifies circuit design by eliminating external freewheeling components. Consider the 1200V rating and 40A current capacity against system load requirements. Evaluate the operating temperature range suitability for harsh industrial environments.
Part Context
This module belongs to SemiQ's advanced power electronics portfolio designed for demanding applications. It utilizes silicon carbide semiconductor technology to achieve superior performance compared to traditional silicon devices. The GCMX and GCMS series represent key product lines focusing on efficiency and reliability in modern power conversion systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult SemiQ technical support for direct replacements or pin-compatible alternatives within their portfolio.
