GCMX003A120S3B1-N

Overview

The SemiQ GCMX003A120S3B1-N is a Silicon Carbide (SiC) MOSFET half-bridge module designed for high-power applications. It features an N-channel configuration with two channels housed in the S3 screw-mount package. The device supports a drain-source breakdown voltage of 1.2 kV and delivers a continuous drain current of 424 A at 25°C case temperature. Its maximum on-resistance is specified at 7 mΩ, while the gate-source voltage range spans from -5 V to +20 V. Operating within a junction temperature range of -40°C to +150°C, the module dissipates up to 1.531 kW of power. Switching characteristics include a typical rise time of 18 ns and a fall time of 24 ns.

Feature Summary

• Utilizes Silicon Carbide technology for enhanced thermal performance and switching efficiency
• Integrated half-bridge topology simplifies circuit design for power conversion stages
• Robust mechanical construction via screw-mount installation style ensures secure connection

Applications

• Industrial motor drives and inverters
• High-frequency DC-DC converters
• Uninterruptible power supply systems

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official datasheets. Confirm that the specific suffix matches the required electrical parameters. Ensure compliance with RoHS directives as indicated in the product documentation before integration into final assemblies.

Selection Notes

Select this module based on its 1.2 kV rating and 424 A current capacity for demanding power electronics designs. Evaluate the 7 mΩ on-resistance against system conduction loss requirements. Consider the S3 package dimensions and screw-mount interface for compatibility with existing heatsink and busbar infrastructure.

Part Context

This component belongs to the SemiQ GCMX series of SiC MOSFET modules. It represents a discrete power solution distinct from integrated intelligent power modules or hybrid configurations. The half-bridge structure provides a fundamental building block for various power conversion topologies requiring high voltage and current handling capabilities.

Replacement Considerations

Direct substitutes require matching 1200V ratings, similar on-resistance values, and compatible S3 packaging. Verify pinout compatibility and thermal resistance specifications to ensure seamless integration without redesigning the cooling system.