GCMX005A120B3B1P

GCMX005A120B3B1P

$97.34
  • Description:MOSFET 4N-CH 1200V 383A
  • Series:-

SKU:a1636371aea7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 1200V 383A
  • Series:-
  • Mfr:SemiQ
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:383A (Tc)
  • Rds On (Max) @ Id, Vgs:7mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id:4V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs:927nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:23500pF @ 800V
  • Power - Max:1.154kW (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Download product information

GCMX005A120B3B1P

Overview

The GCMX005A120B3B1P is a QSiC™ 1200V Silicon Carbide (SiC) Half-Bridge Module manufactured by SemiQ. It features high-speed switching capabilities and low junction-to-case thermal resistance. The module includes an integrated NTC thermistor for temperature monitoring and press-fit terminal connections for direct heatsink mounting. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a continuous drain current of 383 A at TC=25°C, and a typical on-resistance of 4.4 mΩ. The maximum junction temperature is rated at 175°C.

Feature Summary

  • Integrated Kelvin reference pins for stable gate drive operation
  • Internal series gate resistor limits maximum switching frequency
  • Direct mounting to heatsink with isolated package design
  • Built-in NTC thermistor for precise junction temperature monitoring

Applications

  • Photovoltaic Inverter
  • Battery charger
  • Energy storage system
  • High voltage DC to DC converter

Procurement Notes

Verify the specific ordering suffix B3B1P against official documentation to confirm pinout configuration and internal gate resistance values. Ensure that the selected PCB drill diameter matches the press-fit pin requirements specified in the datasheet. Confirm RoHS compliance status through the manufacturer's latest declarations before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-voltage SiC half-bridge configurations with integrated thermal sensing. Evaluate the internal gate resistance impact on switching speed and dv/dt characteristics during circuit design. Ensure the driver circuit supports the recommended operational gate voltage range of -5V to +20V for optimal performance and device protection.

Part Context

This part belongs to the SemiQ QSiC™ family of silicon carbide power modules. The GCMX series utilizes advanced SiC MOSFET technology to achieve superior switching efficiency compared to traditional silicon devices. The module integrates both high-side and low-side switches within a single isolated package to simplify system integration and reduce parasitic inductance.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing cooling solutions due to the specific press-fit mounting requirements and thermal interface specifications outlined in the datasheet.

FAQ

What is the function of the internal gate resistor?

The internal series gate resistor limits the maximum switching frequency defined by the external gate resistance and prevents excessive dv/dt and di/dt rates.

How should the Kelvin sense pins be connected?

All source sense pins (SL1, SL2, SH1, SH2) and gate pins (GL1, GL2, GH1, GH2) should be connected directly to the gate driver circuits to ensure stable operation.

What is the isolation voltage rating?

The module has an isolation voltage rating of 4000 VAC when tested at I_ISOL < 1mA for 1 minute at 50/60 Hz.

GCMX005A120B3B1PGCMX005A120B3B1P
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