GCMX005A120S3B1-N

Overview

The SemiQ GCMX005A120S3B1-N is a Silicon Carbide (SiC) MOSFET half-bridge module designed for high-power applications. It features an N-channel configuration with two channels housed in an S3 screw-mount package. The device supports a drain-source breakdown voltage of 1.2 kV and delivers a continuous drain current of 424 A. Its on-resistance is specified at 7 mOhms, while the gate-source voltage range spans from -5 V to +20 V. Operating within a temperature range of -40 C to +150 C, the module handles a power dissipation of 1.531 kW. Switching characteristics include a rise time of 18 ns and a fall time of 24 ns.

Feature Summary

• Utilizes Silicon Carbide technology for enhanced thermal performance and efficiency
• Integrated half-bridge topology simplifies circuit design
• Robust mechanical construction via screw mount installation style

Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's serial codes against official documentation. Confirm that the specific suffix matches the required electrical specifications, as variations may exist within the product line. Ensure compliance with RoHS directives if applicable to your region. Request updated datasheets directly from authorized distributors to confirm current manufacturing status and availability constraints before finalizing procurement orders.

Selection Notes

Select this module when designing circuits requiring high voltage tolerance and significant current handling capabilities. The low on-resistance contributes to reduced conduction losses, making it suitable for efficient power stages. Consider the thermal management requirements associated with its 1.531 kW power dissipation rating. Ensure the driving circuitry can accommodate the specified gate voltage limits and switching speeds to optimize performance and reliability.

Part Context

This component belongs to the GCMX series of SiC MOSFET modules manufactured by SemiQ. The series focuses on providing robust solutions for demanding power electronics environments. The specific model integrates advanced semiconductor materials to achieve superior performance metrics compared to traditional silicon-based alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Evaluate potential replacements based on matching critical parameters such as voltage rating, current capacity, and package dimensions. Verify compatibility with existing thermal and electrical interfaces before considering alternative components.