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Product Detailed Parameters
- Description：SIC MOSFET MOD
- Series：QSiC™
- Mfr：SemiQ
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C：397A (Tc)
- Rds On (Max) @ Id, Vgs：7mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id：4V @ 120mA
- Gate Charge (Qg) (Max) @ Vgs：1.416µC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：43600pF @ 1.2kV
- Power - Max：2.113kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SemiQ GCMX005A170S3B1-N is a Silicon Carbide (SiC) MOSFET half-bridge module designed for high-power applications. It features an S3 screw-mount package with two N-channel configurations. Key electrical parameters include a drain-source breakdown voltage of 1.7 kV and a continuous drain current of 424 A. The typical on-resistance is 5 mOhms, with gate-source voltage limits ranging from -5 V to +20 V. The device operates between -40°C and +150°C, dissipating up to 1.531 kW of power.
Feature Summary
- Utilizes Silicon Carbide technology for enhanced thermal performance and switching efficiency.
- Configured as a half-bridge module with dual N-channel MOSFETs in a robust S3 package.
- Supports screw mounting for secure installation in high-current industrial environments.
Applications
- High-frequency power conversion systems
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific part number against official manufacturer documentation to ensure accuracy, as suffixes may indicate variations in packaging or testing criteria. Confirm compatibility with existing thermal management solutions and gate drive requirements before integration into final designs.
Selection Notes
Select this component when a 1.7 kV rating and low on-resistance are required for high-efficiency switching. Ensure the application can accommodate the 424 A continuous current capability and that the thermal design supports the specified power dissipation within the operating temperature range.
Part Context
This module belongs to the SemiQ GCMX series, which focuses on high-voltage SiC power modules. The S3 package designation indicates a specific form factor optimized for screw mounting and high-current handling, distinguishing it from lower-power surface-mount alternatives in the broader portfolio.
Replacement Considerations
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and thermal interface dimensions when considering alternative manufacturers' modules with similar voltage and current ratings.
