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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 102A
- Series：-
- Mfr：SemiQ
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：102A (Tc)
- Rds On (Max) @ Id, Vgs：28mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id：4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：241nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：6500pF @ 800V
- Power - Max：385W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The GCMX020A120B2B1P is a 1200V Silicon Carbide (SiC) Half-Bridge Module manufactured by SemiQ. It features N-Channel MOSFETs with a continuous drain current of 102 A at TC=25°C and a maximum on-resistance of 19 mΩ. The device supports a junction temperature range from -40°C to +175°C and offers a power dissipation capacity of 385 W. Key electrical parameters include a turn-on delay time of 22 ns, fall time of 16 ns, and gate threshold voltage of 1.8 V. The module utilizes press-fit terminal connections for mounting.
Feature Summary
- High-speed switching capabilities optimized for low switching losses
- Reliable body diode performance with verified testing above 1350V
- Kelvin reference connection ensures stable operation under varying conditions
- Direct heatsink mounting capability via isolated package design
Applications
- Photovoltaic Inverter systems
- Battery charger designs
- Energy storage system implementations
- High voltage DC to DC converter circuits
Procurement Notes
Verify the specific ordering suffix B1P against official SemiQ documentation to confirm packaging configuration and terminal type. Ensure that the required PCB hole drill diameter of 1.12 mm and copper thickness specifications are compatible with your manufacturing process before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high voltage isolation and efficient thermal management in compact spaces. Consider the 19 mΩ on-resistance and 385 W power dissipation limits when designing heat sinks. Verify that the external gate resistance and operating temperatures align with the specified switching energy characteristics for optimal efficiency.
Part Context
This part belongs to the GCMX series of SiC MOSFET modules from SemiQ. It represents a half-bridge configuration designed to replace traditional silicon IGBTs in high-frequency applications. The module integrates both the switch and freewheeling diode functions into a single robust ceramic package.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should verify pinout compatibility and thermal resistance values if considering alternative manufacturers' devices for direct replacement scenarios.
