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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 27A
- Series：-
- Mfr：SemiQ
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：56nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：1362pF @ 800V
- Power - Max：119W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The GCMX080A120B2H1P is a 1200V SiC full-bridge module from SemiQ. It features four N-channel MOSFETs with a drain-source voltage of 1200V and an on-resistance of 77mΩ at 25°C. The continuous drain current is 27A at TC=25°C, reducing to 23A at TJ=175°C. The pulsed drain current reaches 80A. Operating junction temperature ranges from -40°C to 175°C. Power dissipation is 119W at TC=25°C. The package includes Kelvin references for stable operation and press-fit terminal connections.
Feature Summary
- Full-bridge configuration integrating four SiC MOSFETs in a single isolated package
- Direct heatsink mounting capability via press-fit terminal connections
- Kelvin gate reference terminals provided for stable switching operation
- Integrated NTC thermistor for thermal monitoring
Applications
- Photovoltaic inverters
- Battery chargers
- Energy storage systems
- High voltage DC to DC converters
Procurement Notes
Verify the specific revision status and RoHS compliance documentation directly with SemiQ before finalizing orders. Confirm that the press-fit PCB hole dimensions (drill diameter 1.12mm to 1.15mm) match the target board design. Ensure the mounting torque specifications are adhered to during assembly to maintain thermal performance and mechanical integrity.
Selection Notes
Select this component when a compact full-bridge topology is required for high-voltage applications. The 77mΩ on-resistance offers a balance between conduction loss and cost compared to lower resistance alternatives. Verify that the 27A continuous current rating meets the peak load requirements of the specific application under the intended case temperature conditions.
Part Context
This device belongs to SemiQ's GCMX series of silicon carbide power modules. It utilizes a ceramic package designed for high thermal conductivity and electrical isolation. The B2 marking indicates the specific package variant used for this full-bridge configuration within the broader product lineup.
Replacement Considerations
No public substitute part numbers are documented for this specific model. Direct replacement requires matching the 1200V rating, full-bridge configuration, and press-fit mounting interface.
