GCMX080A120B2H2P

Overview

The SemiQ GCMX080A120B2H2P is a silicon carbide (SiC) MOSFET module belonging to the Gen3 QSiC series. It features an N-channel configuration housed in a SOT-227-4 package with screw mount installation. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 28A at case temperature. Its maximum on-resistance is specified at 100mΩ, with gate-source voltage limits ranging from -8V to +22V. Operating within a junction temperature range of -55°C to +175°C, it exhibits a power dissipation capacity of 118W, with rise and fall times of 4ns and 26ns respectively.

Feature Summary

• Utilizes Silicon Carbide technology for high-temperature operation up to 175°C
• Integrated single N-channel MOSFET design simplifies circuit topology
• Screw mount SOT-227-4 package facilitates robust mechanical attachment

Applications

• High-frequency power conversion systems
• Industrial motor drives requiring high thermal stability
• DC-DC converters operating under extreme temperature conditions

Procurement Notes

Verify the specific suffix 'H2P' against official datasheets to confirm pinout and electrical characteristics, as variations exist within the GCMX family. Ensure compatibility with existing thermal management solutions given the 118W dissipation rating. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Selection Notes

Select this component when a single high-voltage SiC switch is required rather than a bridge configuration. Compare the 28A current rating against load requirements to ensure adequate margin. Evaluate the 100mΩ on-resistance impact on conduction losses relative to lower resistance alternatives like the GCMX020 series if higher current capacity is needed.

Part Context

This module is part of SemiQ's Gen3 QSiC portfolio, which includes various SiC MOSFETs and diodes. It complements full-bridge variants such as the GCMX020A120B2H2P by offering discrete switching capability. The series emphasizes reduced component count and improved cooling efficiency for high-power electronics designers.

Replacement Considerations

Direct substitutes include other Gen3 single-channel modules like the GCMX080C120S1-E1, though package differences must be addressed. For higher current needs, consider the GCMX020A120B2H2P full-bridge array. Verify pin compatibility before swapping with legacy GCMX models.