GD2X75MPS17N

Diode Arrays Overview

The GD2X75MPS17N is a dual silicon carbide Schottky MPS diode rated for 1700 V repetitive peak reverse voltage and 150 A continuous forward current per device. It utilizes Gen4 thin chip technology to achieve low forward voltage and superior Qrr/Io figure of merit. The component operates within a junction temperature range of -55 °C to 175 °C, featuring zero reverse recovery current and positive temperature coefficient characteristics.

Diode Arrays Feature Summary

• Gen4 thin chip technology enables low forward voltage and enhanced surge robustness.
• Temperature-independent fast switching with zero reverse recovery current.
• Positive temperature coefficient of forward voltage facilitates easy parallel operation without thermal runaway.

Diode Arrays Applications

• EV Fast Chargers
• Solar Inverters
• Wind Energy Converters
• Train Auxiliary Power Supplies
• High Frequency Rectifiers

Diode Arrays Procurement Notes

Verify the specific manufacturing date code against the latest GeneSiC Semiconductor revision history to ensure compliance with current RoHS and REACH standards. Confirm that the SOT-227 package mounting torque specifications are strictly adhered to during installation to maintain isolation voltage integrity and prevent mechanical failure under thermal cycling conditions.

Diode Arrays Selection Notes

Select this component for high-power density applications requiring efficient thermal management and high reliability. The dual configuration in an isolated base package simplifies circuit design for bridge topologies. Ensure the system's cooling capacity supports the specified power dissipation ratings at the intended operating junction temperatures to maximize device lifespan and performance stability.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor, designed for high-voltage power conversion. It represents an evolution in silicon carbide technology, offering improved ruggedness compared to previous generations. The device is engineered to replace traditional silicon diodes in demanding industrial and automotive environments where efficiency and switching speed are critical.

Diode Arrays Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal resistance values. Check datasheets for alternative dual SiC diodes in SOT-227 packages with matching 1700V ratings. Ensure substitute components support similar surge current capabilities and have comparable junction-to-case thermal resistance to maintain system thermal design margins.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The device can withstand a non-repetitive avalanche energy of 1270 mJ when tested with an inductance of 0.5 mH and a current of 75 A.

Does the forward voltage exhibit a positive or negative temperature coefficient?

The GD2X75MPS17N features a positive temperature coefficient of forward voltage, which allows for stable parallel operation without the risk of thermal runaway.

What is the typical reverse leakage current at maximum rated voltage and temperature?

At a reverse voltage of 1700 V and a junction temperature of 175 °C, the maximum reverse current is specified as 41 µA.