GE12047BCA3

Description：MOSFET 2N-CH 1200V 475A
Series：SiC Power

SKU:d9ff32f9b138 Category: FET, MOSFET Arrays Brand: GE Aerospace

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Product introduction

GE12047BCA3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GE Aerospace. Its product description is MOSFET 2N-CH 1200V 475A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GE12047BCA3

Description：MOSFET 2N-CH 1200V 475A
Series：SiC Power
Mfr：GE Aerospace
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：475A
Rds On (Max) @ Id, Vgs：4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id：4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs：1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：29300pF @ 600V
Power - Max：1250W
Operating Temperature：-55°C ~ 150°C (Tc)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GE12047BCA3

GE12047BCA3

FET, MOSFET Arrays Overview

The GE12047BCA3 is a 1200V dual silicon carbide power module manufactured by General Electric. It integrates two independent SiC MOSFETs within a single package, designed for high-voltage and high-temperature applications. The device utilizes silicon carbide semiconductor technology to achieve superior thermal performance and switching efficiency compared to traditional silicon devices. This configuration supports half-bridge or dual-switch topologies in power conversion systems.

FET, MOSFET Arrays Feature Summary

Dual-channel architecture integrating two independent switches
Silicon carbide construction for enhanced thermal stability
High voltage rating suitable for demanding power environments

FET, MOSFET Arrays Applications

Industrial motor drives
Renewable energy inverters
High-efficiency power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status against the manufacturer's documentation dated June 11, 2021. Confirm that the dual silicon carbide configuration matches the system requirements. Ensure compatibility with the intended thermal management solution due to the high-power density of the module.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-switch solution is required for high-voltage operations. The silicon carbide material offers advantages in high-temperature environments. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the specific application load.

FET, MOSFET Arrays Part Context

This module belongs to the series of silicon carbide power modules released by General Electric. It represents an advancement in power electronics by combining multiple switches into a robust package. The design focuses on improving efficiency and reducing the footprint of power conversion stages.