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Product Detailed Parameters
- Description：IGBT
- Series：ECOPACK®
- Mfr：STMicroelectronics
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：108 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：385 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：152 nC
- Td (on/off) @ 25°C：-
- Test Condition：400V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：912 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package：-
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The GH50H65DRB2-7AG is an automotive-grade trench gate field-stop IGBT featuring a co-packed freewheeling diode, housed in an H²PAK-7 package. It belongs to the high-speed HB2 series with a collector-emitter voltage of 650 V and continuous collector current of 108 A at 25 °C case temperature. The device exhibits a typical saturation voltage of 1.6 V at 50 A and operates up to a maximum junction temperature of 175 °C. Thermal resistance from junction to case is 0.39 °C/W for the IGBT and 0.75 °C/W for the diode. Total gate charge is typically 152 nC at 520 V and 50 A.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Minimized tail current and low switching energy
- Positive VCE(sat) temperature coefficient for safe parallel operation
- Extra driving Kelvin pin for improved switching performance
Applications
- On-board charger (OBC)
- Single-phase input PFC converter
Procurement Notes
Verify component authenticity by cross-referencing the marking code G50H65RB2A against official STMicroelectronics documentation. Confirm the package type is H²PAK-7 and that the part is supplied in tape and reel packaging. Ensure the specific revision DS14757 Rev 3 is referenced during procurement to align with the latest electrical characteristics and thermal data provided in the datasheet.
Selection Notes
Select this component for applications requiring high-speed switching and robust thermal performance in automotive environments. The positive temperature coefficient of VCE(sat) facilitates safe parallel operation without active current balancing. Consider the 175 °C maximum junction temperature rating when designing thermal management solutions for high-power density systems such as on-board chargers.
Part Context
This IGBT is part of the HB2 series, representing an evolution of the trench gate field-stop structure. The series is optimized for conduction losses at low currents and reduced switching energy compared to previous generations. The integration of a high-ruggedness rectifier diode in the same package simplifies circuit design for hard-switching applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the source material.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
How does the device handle parallel operation?
It features a positive VCE(sat) temperature coefficient, which helps ensure stable current sharing during parallel operation.
What is the purpose of the Kelvin pin?
The extra driving Kelvin pin provides a separate path for gate drive signals, improving switching performance by minimizing noise coupling from the power loop.
