GHXS100B170S-D3

GHXS100B170S-D3

$48.54
  • Description:1700V, 100A SIC DUAL DIODE MODUL
  • Series:QSiC™

SKU:c99a82b943f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:1700V, 100A SIC DUAL DIODE MODUL
  • Series:QSiC™
  • Mfr:SemiQ
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):214A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 100 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:400 µA @ 1.7 kV
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

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GHXS100B170S-D3

Overview

The GHXS100B170S-D3 is a Silicon Carbide Schottky Barrier Diode module manufactured by SemiQ. It features a 1700V reverse voltage rating and supports a continuous forward current of 100A. The device utilizes SiC technology to achieve high-temperature operation up to +175°C, with a minimum operating temperature of -55°C. It is housed in an SOT-227-4 package designed for screw mounting. The typical forward voltage is specified at 2.3V.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for enhanced thermal performance
  • High breakdown voltage capability suitable for demanding power applications
  • Designed for robust screw-mount installation in industrial environments

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Solar inverters

Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the SOT-227-4 mechanical dimensions align with your printed circuit board layout and thermal management requirements. Ensure that the screw mounting torque specifications are strictly followed during assembly to maintain electrical integrity and prevent mechanical stress on the module.

Selection Notes

Select this component when a high-voltage, high-current rectification solution is required in compact power modules. The SiC material offers superior switching characteristics compared to traditional silicon devices. Consider the thermal resistance and heat sink compatibility when designing the system. Verify that the 1700V rating provides sufficient margin for the specific application's peak inverse voltage conditions.

Part Context

This part belongs to the GHXS series of SiC Schottky diode modules from SemiQ. These modules are engineered for high-efficiency power conversion systems. The series typically includes various voltage and current ratings to accommodate different power levels. The SOT-227-4 package is a standard form factor for high-power discrete and module applications.

Replacement Considerations

No public confirmed substitute part numbers are available.

GHXS100B170S-D3GHXS100B170S-D3
$48.54
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