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The GN2470K4-G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a TO-252 (D-Pak)-3 surface-mount package and utilizes silicon technology. The device has a collector-to-emitter maximum voltage of 700V, a gate-to-emitter maximum voltage range of -20V to +20V, and a continuous collector current rating of 1A with a pulsed capability of 3.5A. Power dissipation is rated at 2.5W at an ambient temperature of 25°C. The component operates within a temperature range from -55°C to +150°C.
Verify the specific ordering suffix K4 to confirm the TO-252 D-Pak package configuration. Ensure compliance with RoHS certification requirements if environmental standards are mandatory for the assembly process. Confirm that the discontinuation status does not impact long-term supply chain stability for production needs.
Select this component when a 700V blocking voltage is required in a compact surface-mount footprint. Evaluate thermal management capabilities based on the 2.5W power dissipation limit at 25°C ambient conditions. Consider the 1A continuous current rating against peak load demands to ensure reliable operation within specified junction temperatures.
This part belongs to the Supertex GN2470 series of IGBTs, which were originally developed by Supertex before being acquired by Microchip Technology. The product line focuses on medium-voltage switching applications requiring efficient power conversion in consumer electronics and appliance control circuits.
Direct substitutes include the base model GN2470, which shares identical electrical specifications but may differ in packaging or environmental certification details.